? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c, r gs = 1m 300 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c24a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c52a e as t c = 25 c1j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting force 11..66 / 2.5..14.6 n/lb. weight 2 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 4ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 26a, note 1 75 m polarht tm power mosfet hiperfet tm (electrically isolated back surface) n-channel enhancement mode avalanche rated ixfc52n30p v dss = 300v i d25 = 24a r ds(on) 75m ds99246f(5/08 ) t rr 200ns features ul recognized package silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation avanlache rated fast intrinsic diode advantages easy to mount space savings high power density applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor drives g = gate d = drain s = source g d s isoplus 220 tm e153432 isolated tab
ixfc52n30p ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 26a, note 1 20 30 s c iss 3490 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 550 pf c rss 130 pf t d(on) 24 ns t r 22 ns t d(off) 60 ns t f 20 ns q g(on) 110 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 26a 25 nc q gd 53 nc r thjc 1.25 c/w r thcs 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 52 a i sm repetitive, pulse width limited by t jm 150 a v sd i f = 52a, v gs = 0v, note 1 1.5 v t rr 200 ns q rm 800 nc i rm 7 a i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 52a r g = 4 (external) isoplus220 tm (ixfc) outline ref: ixys co 0177 r0 note: bottom heatsink (pin 4) is electrically isolated from pin 1,2, or 3.
? 2008 ixys corporation, all rights reserved ixfc52n30p fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 0 4 8 1216202428 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 012345678910 v d s - volts i d - amperes v gs = 10v 8v 6v 7v 5v fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0.00.51.01.52.02.53.03.54.04.55.0 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 26a v alue vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalized i d = 52a i d = 26a v gs = 10v fig. 5. r ds(on) normalized to i d = 26a v alue vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 0 25 50 75 100 125 150 i d - amperes r d s (on) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. drain current vs. case temperature 0 3 6 9 12 15 18 21 24 27 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixfc52n30p ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: t_52n30p (6s)6-13-06-c fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070809010 0 11 0 12 0 q g - nanocoulombs v g s - volts v ds = 150v i d = 26a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 4.04.55.05.56.06.57.07.58.0 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 160 0.40.50.60.70.80.91.01.11.21.31.4 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 25s 1ms dc r ds (on) limi t 10ms 100ms t j = 25oc t j = 150oc single pulse
? 2008 ixys corporation, all rights reserved ixfc52n30p ixys ref: t_52n30p (6s)6-13-06-c fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 pulse width - milliseconds z (th) j c - (oc/w )
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